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| 30V N-Channel Power MOSFET General Description The AAT9055 30 V N-Channel Power MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. AAT9055 Features * * * * PWMSwitchTM VDS(MAX) = 30V ID(MAX)1 = 12 A @ TC = 25C IAPP(MAX) = 6A in typical computer application Low RDS(ON): * 56 m @VGS = 10V * 90 m @VGS = 4.5V Applications * * * DC-DC converters High current load switches LDO output DPAK Package Drain-Connected Tab Preliminary Information G S Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TC=25C unless otherwise noted) Value 30 20 12 10 16 12 22 14 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TC = 25C TC = 70C Pulsed Drain Current 3 Continuous Source Current (Source-Drain Diode) 1 TC = 25C Maximum Power Dissipation 1 TC = 70C Operating Junction and Storage Temperature Range A W C Thermal Characteristics Symbol RJA RTYP RJC Description Maximum Junction-to-Ambient Typical Junction to ambient on PC board Maximum Junction-to-Case 2 Value 100 28 5.5 Units C/W C/W C/W 9055.2003.04.0.61 1 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions VGS=0V, ID=250A VGS=10V, ID=12A VGS=4.5V, ID=10A VGS=10V, VDS=5V (Pulsed) VGS=VDS, ID=250A VGS=20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=70C VDS=5V, ID=4A VDS=15V, RD=2.5, VGS=5V VDS=15V, RD=2.5, VGS=10V VDS=15V, RD=2.5, VGS=10V VDS=15V, RD=2.5, VGS=10V VDD=15V, RD=2.5, VGS=10V, VDD=15V, RD=2.5, VGS=10V, VDD=15V, RD=2.5, VGS=10V, VDD=15V, RD=2.5, VGS=10V, 3 AAT9055 Min 30 Typ Max Units V DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 3 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current 3 44 68 16 1.0 56 90 m A V nA A S 100 1 25 6 4.2 7.7 1.35 1.2 2.5 2.6 12 5.7 1.2 1.5 12 gfs Forward Transconductance 3 Dynamic Characteristics 4 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 Notes: nC RG=6 RG=6 RG=6 RG=6 ns VGS=0, IS=12A V A 1. Based on thermal dissipation from junction to case. RJC + RCA = RJA where the case thermal reference is defined as the solder mounting surface of the drain tab. RJC is guaranteed by design, however RCA is determined by the PCB design. Package current is limited to 8A DC and 16A pulsed. 2. Mounted on typical computer main board. 3. Pulse measurement 300 s. 4. Guaranteed by design. Not subject to production testing. 2 9055.2003.04.0.61 30V N-Channel Power MOSFET Typical Characteristics Output Characteristics 16 AAT9055 Transfer Characteristics 16 10V 12 5V 6V 4.5V 12 VD =VG -55C 25C 125C IDS (A) 8 ID (A) 4V 3.5V 3V 8 4 4 0 0 3 4 0 1 2 0 1 2 3 4 5 V DS (V) V GS (V) On-Resistance vs. Drain Current 120 100 100 80 On-Resistance vs. Gate to Source Voltage RDS(ON) (m) RDS(ON) (m) 80 I D = 10A 60 VGS = 4.5V 60 40 20 0 0 4 8 12 16 2V 40 20 0 0 2 4 6 8 10 VGS = 10V ID (A) VGS (V) Gate Charge 10 8 6 4 2 0 0 2 4 6 8 10 0.1 0.4 Source-Drain Diode Forward Voltage 100 VD =15V RD =2.5 10 TJ = 150C V GS (V) IS (A) 1 TJ = 25C 0.6 0.8 1 1.2 1.4 QG, Charge (nC) V SD (V) 9055.2003.04.0.61 3 30V N-Channel Power MOSFET Ordering Information Package TO-252 (DPAK) Marking 9055 Part Number (Tape and Reel) AAT9055INY-T1 AAT9055 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information TO-252 (DPAK) 6.54 0.19 5.205 0.255 9.855 0.555 5.775 0.445 1.46 0.57 7.5 7.5 2.285 0.105 0.83 0.19 2.67 REF 2.29 BSC 1.145 0.72 0.17 0.58 0.13 0.13 1.59 0.19 All measurements in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 9055.2003.04.0.61 0.50 |
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